首页 简介 发表文章 动态 文化生活 相关链接 联系我们  
 
2017
2016
2015
2014
2013
2012
2011
2010
2009
2006-2008
会议论文
专利
   
 
  • X. M. Cai, S. W. Zeng and B. P. Zhang*, "Favourable Photovoltaic Effects in InGaN pin Homojunction Solar Cell", Electronics Letters, 24 (2009) 1266 .

  • C. Y. Liu*, B. P. Zhang, Z. W. Lu, N. T. Binh, K. Wakatsuki, Y. Segawa and R. Mu, "Fabrication and Characterization of ZnO Film Based UV Photodetector", J Mater Sci:Mater Electron, 20 (2009) 197.
  • J. Y. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu and Q. M. Wang*, "Efficient Hole Transport in Asymmetric Coupled InGaN Multiple Quantum Wells", Appl. Phys. Lett, 95 (2009) 161110.
  • X. M. Cai, S. W. Zeng and B. P. Zhang*, "Fabrication and Characterization of InGaN p-i-n Homojunction Solar Cell", Appl. Phys. Lett, 95 (2009) 173504.
  • S. W. Zeng, B. P. Zhang*, J. W. Sun, J. F. Cai, C. Chen and J. Z. Yu, "Substantial Photo-response of InGaN p-i-n Homojunction Solar Cells", Semiconductor Science and Technology, 24 (2009) 055009. 
  • 吴超敏,尚景智,张保平*,余金中,王启明,“蓝光波段高反射率AlN/GaN分布布拉格反射镜的制作”,半导体光电, 30 (2009) 555。
  • J. Z. Shang, B. P. Zhang*, M. H. Mao, L. E. Cai, J. Y. Zhang, Z. L. Fang, B. L. Liu, J. Z. Yu, Q. M. Wang, K. Kusakabe and K. Ohkawa, "Growth Behavior of AlInGaN Films", Journal of Crystal Growth, 311 (2009) 474 .

  • J. Y. Zhang, L. E. Cai, B. P. Zhang*, S. Q. Li, F. Lin, J. Z. Shang, D. X. Wang, K. C. Lin, J. Z. Yu and Q. M. Wang, "Blue-Violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface Emitting Laser With Dielectric Distributed Bragg Reflectors", Journal of Lightwave Technology, 27 (2009) 55.