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  • X. Q. Lv, J. Y. Zhang, L. Y. Ying, W. J. Liu, X. L. Hu, B. P. Zhang*, Z. R. Qiu, S. Kuboya, K. Onabe, "Well-width dependence of the emission-linewidth in ZnO/MgZnO quantum wells",Nanoscale Research Letters 7 (2012) 605.

  • X. L. Hu, W. J. Liu, G. E. Weng, J. Y. Zhang, X. Q. Lv, M. M. Liang, M. Chen, H. J. Huang, L. Y. Ying and B. P. Zhang*. "Fabrication and Characterization of High Quality Factor GaN-based Resonant-cavity Blue Light-emitting Diodes", IEEE Photonics Technology Letters, 24 (2012) 1472-1474.

  • M. Chen, W. J. Liu, L. E. Cai, J. Y. Zhang, L. Sun, M. M. Liang, X. L. Hu, X. M. Cai, F. Jiang, X. Q. Lv, L. Y. Ying, Z. R. Qiu and B.P.Zhang*. "Fabrication of Veritcal-structured GaN-Based Light-Emitting Diodes Using Auto-Split Laser Lift-Off Technique", Electrochemical and Solid State Letters, 1(2012) Q26-Q28.
  • J. Y. Zhang, W. J. Liu, M. Chen, X. L. Hu, X. Q. Lv, L. Y. Ying and B. P. Zhang*, "Performance Enhancement of GaN-based Light Emitting Diodes by Transfer from Sapphire to Silicon Substrate using Double-transfer Technique", Nanoscale Research Letters, 7 (2012) 244.
  • S. Lin, S. W. Zeng, X. M. Cai, J. Y. Zhang, S. X. Wu, L. Sun and B. P. Zhang*, "Simulation of Doping Levels and Deep Levels in InGaN-based Single-junction Solar Cell", J Mater Sci, 47 (2012) 4595-4603.  
  • W. J. Liu, X. L. Hu, J. Y. Zhang, G. E. Weng, X. Q. Lv, H. J. Huang, M. Chen, X. M. Cai, L. Y. Ying and B. P. Zhang*. "Low-Temperature Bonding Technique for Fabrication of High-Power GaN-Based Blue Vertical Light-Emitting Diodes", Optical Materials, 34 (2012) 1327-1329.
  • 陈少伟,吕雪芹,应磊莹,张江勇,张保平*,“GaN 基可调谐光栅外腔半导体激光器”,中国科技论文在线,2012

合作发表

  • S. Q. Chen, M. Okano, B. P. Zhang, M. Yoshita, H. Akiyama, and Y. Kanemitsu, "Blue 6-ps short-pluse generation in gain-switched InGaN vertical-cavity surface-emitting lasers via impulsive pumping". Applied Physics Letters 101, 191108(2012).