首页 简介 发表文章 动态 文化生活 相关链接 联系我们  
 
2017
2016
2015
2014
2013
2012
2011
2010
2009
2006-2008
会议论文
专利
   
 
  • Y. Mei, G. E. Wen, L. Y. Ying, R. B. Xu, Z. W. Zheng, W. Hofmann, J. P. Liu, H. Yang and B. P. Zhang,"Vertcal-cavity surface=emitting lasers emitting in the 'green gap'", 12th International Conference on Nitride Semiconductors,24th-28th July 2017,Strasbourg, France.

  • X. M. Cai, X. Q. Lv, X. L. Wang, H. L. Zhu, M. S. Wang, L. Yang and B. P. Zhang,"Investigation of  InGaN/GaN multiple quantum well solar cells with different barrier thickness",12th International Conference on Nitride Semiconductors,24th-28th July 2017,Strasbourg, France.

  • J. Z. Wu, H. Long and B. P. Zhang,“Polariton Luminescence in InGaN Quantum Wells Microcabity at Room Temperature”,12th International Conference on Nitride Semiconductors,24th-28th July 2017,Strasbourg, France.

  • H. Long, X. H. Feng, Y. Mei, T. J. Yu, S. S. Fan, L. Y. Ying and B. P. Zhang, "Carbon nanotube assisted Lift off of GaN layers on sapphire", 12th International Conference on Nitride Semiconductors,24th-28th July 2017,Strasbourg, France.

  • (Invited)B. P. Zhang, Y. Mei, G. E. Weng, J. P. Liu, W. Hofmann, L. Y. Ying. "Green VCSELs based on InGaN QDs", SPIE Photonics Asia 2016, October, Beijing, China.

  • 吴瑾照, 龙浩,张保平*,室温InGaN量子阱微腔中激子极化激元的研究" ,十五届全国固体薄膜学术会议,2016年12月7日-12月10日,中国上海。

  • 龙浩,张保平*,“蓝宝石/GaN激光剥离模拟计算”,第十四届全国MOCVD学术会议,2016年8月16日-8月19日,中国吉林。

  • 梅洋,翁国恩,应磊莹,刘建平,W.Hofmann,张保平*,"低阈值黄绿光量子点面发射激光器的室温连续激射",第十四届全国MOCVD学术会议,2016年8月16日-8月19日,中国吉林。
  • (Invited)B. P. Zhang. ”Loss study and fabrication of low-threshold GaN-based VCSELs”. ISPlasma2016/IC-PLANT2016, March 5-10, 2016, Nagoya, Japan.

  • 张保平,“GaN基VCSEL研究”,第一届全国宽禁带半导体学术及应用技术会议,2015年10月30-11月2日,中国江苏。

  • 梅洋,翁国恩,张江勇,应磊莹,张保平,李增成,刘建平,杨辉,“低阈值蓝绿光垂直腔面发射激光器研究”,第一届全国宽禁带半导体学术及应用技术会议,2015年10月30-11月2日,中国江苏。

  • (合作发表)陈少强,翁国恩,胡小波,张保平,秋山英文,“氮化物面发射激光器的增益开关特性”,第一届全国宽禁带半导体学术及应用技术会议,2015年10月30-11月2日,中国江苏。

  • 龙浩,曾勇平,张保平,“双P型LED发光器件”,第一届全国宽禁带半导体学术及应用技术会议,2015年10月30-11月2日,中国江苏。

  • 郑志威,赖萌华,余健,张江勇,应磊莹,张保平,“垂直结构InGaN/GaN多量子阱太阳能电池研究”,第一届全国宽禁带半导体学术及应用技术会议,2015年10月30-11月2日,中国江苏。

  • W. R. Zhao, G. E. Weng, J. Y. Wang, J. Y. Zhang, H. W. Liang, T. Sekiguchi, and B. P. Zhang, "Enhanced Light Emission Due to Formation of Semi-Polar InGaN/GaN Multi-Quantum Wells", The 11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing, China.

  • G. E. Weng, W. J. Liu, Y. Mei, Y. P. Zeng, J. Y. Zhang, L. Y. Ying, Z. C. Li, J. P. Liu, H. Yang, and B. P. Zhang. ”Low Threshold Lasing of GaN-Based VCSELs Emitting in the Blue-Green”, The 11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing, China.

  • 蔡晓梅,张江勇,应磊莹,吕雪芹,张保平*,“氮化物光伏电池的制备和特性分析”,第十三届全国MOCVD学术会议,2014年5月6-9日,江苏扬州。
  • 张江勇,应磊莹,陈明,刘文杰,张保平*,“高散热正装结构薄膜LED研究”,第十三届全国MOCVD学术会议,2014年5月6-9日,江苏扬州。
  • 陈明,应磊莹,张江勇,张保平*,“基于激光剥离技术的自分裂垂直结构GaN基LED”,第十三届全国MOCVD学术会议,2014年5月6-9日,江苏扬州。
  • 翁国恩,赵婉如,陈少强,刘建平,张江勇,张保平*,“InGaN量子点中的载流子局域效应”,第十三届全国MOCVD学术会议,2014年5月6-9日,江苏扬州。
  • (邀请报告)刘文杰,应磊莹,张江勇,张保平*,“基于高Q值微型谐振腔的GaN基垂直腔面发射激光器”,第十三届全国MOCVD学术会议,2014年5月6-9日,江苏扬州。
  • 吕雪芹,陈少伟,张江勇,应磊莹,张保平,“GaN基光栅外腔可调谐半导体激光器性能研究”, 第13届全国发光学学术会议,2013年4月20-24日,南京。
  • 胡晓龙,刘文杰,张江勇,应磊莹,吕雪芹,张保平,“电注入高Q值氮化物谐振腔的器材的 研制”,第十七届全国化合物半导体材料、微波器件和光电器件学术会议,2012年11月7-10日,开封。
  • X. M. Cai, Y. Wang, Z. D. Li, S. Lin, M. M. Liang, X. Q. Lv, J. Y. Zhang, and B. P. Zhang*.
    "Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent
    current spreading electrode", International Workshop on Nitride Semiconductors (IWN2012), October 14-19, 2012, Sapporo, Japan.
  • X. L. Hu, W. J. Liu, J. Y. Zhang, G. E. Weng, M. M. Liang, X. Q. Lv, L. Y. Ying,and B. P. Zhang*. "Fabrication of high quality nitride based resonators for vertical-cavity surface-emitting laser", InternationalWorkshop on Nitride Semiconductors(IWN2012), October 14-19, 2012, Sapporo, Japan.
  • W. J. Liu, X. L. Hu, J. Y. Zhang, X. Q. Lv, L. Y. Ying, and B. P. Zhang*. "Enhanced performance of GaN-based light-emitting devices using low-temperature metallic bonding technique", International Workshop on Nitride Semiconductors(IWN2012), October 14-19, 2012, Sapporo, Japan.
  • M. Chen, L. E. Cai, J. Y. Zhang, L. Sun, F. Jiang, W. J. Liu, M. M. Liang, X. L. Hu, X. M. Cai, X. Q. Lv, L. Y. Ying, and B. P. Zhang*. "Fabrication of Vertical-structured GaN-Based Light-Emitting Diodes Using Auto-Split Laser Lift-Off Technique", International Workshop on Nitride Semiconductors(IWN2012), October 14-19, 2012, Sapporo, Japan.
  • (Invited)B. P. Zhang*, "Fabrication and Operation of InGaN Quantum-well Optical Devices", DYCE-ASIA Workshop: Dynamically-correlated electrons and blue-violet generating materials and devices, April 23-24, 2012, Tokyo, Japan.
  • (Invited)B. P. Zhang*, "High-Power GaN-based LEDs by Improved Heat Dissipation", Unversity of Yamanashi International Symposium UYIS2011: Symposium on Global Research in Advanced Photonics and Energy (GRAPE), December 6, 2011, Yamanashi, Japan.
  • X. M. Cai, S. W. Zeng, X. Li, J. Y. Zhang, S. Lin, A. K. Lin and B. P. Zhang*, "Effect of Light Intensity and Temperature on The Performance of GaN-based p-i-n Solar Cells",The 2nd International Conference on Electrical and Control Engineering, Sept 16-18, 2011, Yichang, China.
  • (邀请报告)张保平,张江勇,胡晓龙。蔡丽娥,刘文杰,陈明,王启明,“蓝绿光VCSEL与RCLED研究”,第12届全国发光学学术会议,2010年11月5-8日,苏州。
  • (Invited)B. P. Zhang*, J. Y. Zhang, L. E. Cai and X. L. Hu, "Design and Fabrication of Optically Pumped GaN-based VCSELs", The 8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010), May 17-21, 2010, Beijing, China.

  • (Invited)B.P.Zhang*, J. Y. Zhang, L. E. Cai and X. L. Hu, "GaN-based Micro-cavity Optoelectronic Devices", IEEE-NEMS 2010, January 20-23, Xiamen, China.

  • (邀请报告)张保平,张江勇,蔡丽娥,胡晓龙,余金中,王启明,“氮化物垂直腔面发射激光器”,第十一届全国MOCVD学术会议,2010年1月12-15日,苏州。

  • J. Y. Zhang, L. E. Cai, B. P. Zhang*, J. Z. Shang, J. Z. Yu and Q. M. Wang, "Design and Characteristics of Periodic Gain GaN-based Vertical Cavity Surface Emitting Lasers (VCSELs)", International Workshop on Nitride Semiconductors(IWN2008), October 6-10, 2008, Montreux, Switzerland.

  • J. Y. Zhang, L. E. Cai, B. P. Zhang*, J. Z. Shang, J. Z. Yu and Q. M. Wang, "Blue Lasing of Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers", The Asia-Pacific Workshop on Widegap Semiconductors(APWS2009), May 24-28, Zhangjiajie, China.

  • S. W. Zeng, B. P. Zhang*, J. W. Sun, J. F. Cai, C. Chen and J. Z. Yu, "Fabrication and Characterization of InGaN p-i-n Homojunction Solar Cells ", The Asia-Pacific Workshop on Widegap Semiconductors(APWS2009), May 24-28, Zhangjiajie, China.

  • C. M. Wu, J. Z. Shang, B. P. Zhang*, J. Y. Zhang, J. Z. Yu and Q. M. Wang, "Impact of GaN Buffer Layer on Properties of AlN/GaN Distributed Bragg Reflectors", The Asia-Pacific Workshop on Widegap Semiconductors(APWS2009), May 24-28, Zhangjiajie, China.