• L. E. Cai, J. Y. Zhang, C. M. Wu, F. Jiang, X. L. Hu, M. Chen, Q. M. Wang and B. P. Zhang*, "Improvement of Efficiency Droop of GaN-based Light Emitting Devices by A Rear Nitride Reflector", Physica E, 43 (2010) 289-292.

• F. Jiang, L. E. Cai, J. Y. Zhang and B. P. Zhang*, "Formation of High Reflective Ni/Ag/Ti/Au Contact on p-GaN", Physica E, 42 (2010) 2420–2423.

• X. L. Hu, J. Y. Zhang, J. Z. Shang, W. J. Liu and B. P. Zhang*, "The Exciton-longitudinal-optical-phonon Coupling in InGaN/GaN Single Quantum Well with Various Cap Layer Thicknesses", Chinese Physics B, (2010) 117801.

• C. M. Wu, J. Z. Shang, J. Y. Zhang, J. Z. Yu, Q. M. Wang and B. P. Zhang*, "Impact of Thickness of GaN Buffer Layer on Properties of AlN/GaN Distributed Bragg Reflectors Grown by Metalorganic Chemical Vapor Deposition", SCIENCE CHINA Technological Sciences, 53 (2010) 313-316.

• S. W. Zeng, X. M. Cai and B. P. Zhang*, "Demonstration and Study of Photovoltaic Performances of InGaN p-i-n Homojunction Solar Cells", IEEE J. Quantum Electronics, 46 (2010) 783.

合作发表

• 薛正群，黄生荣，张保平，陈朝*，“GaN基白光发光二极管失效机理分析”，物理学报, 59 (2010) 600-607.

• Z. Q. Xue, S. R. Huang, B. P. Zhang and C. Chen*, "Laser-induced Zn Doping in GaN-based Light-emitting Diode", APPLIED PHYSICS LETTERS, 96 (2010) 141101.

• 薛正群，黄生荣，张保平，陈朝*，“激光诱导p-GaN掺杂对发光二极管性能改善的分析”，物理学报, 59 (2010) 1268.