2013

  • 姚真瑜,吕雪芹,张保平,“ GaN基光栅外腔半导体激光器研究进展 ”,微纳电子技术,10 (2013) 609-614.

  • 陈少伟,吕雪芹*,张江勇,应磊莹,张保平,“蓝紫光宽带可调谐光栅外腔半导体激光器”,中国激光,111405 (2013) 1-5.

  • W.J. Liu, S. Q. Chen, X. L. Hu, Z. Liu, J. Y. Zhang, L. Y. Ying, X. Q. Lv, H. Akiyama, Z. P. Cai and B. P. Zhang, "Low threshold lasing of optically pumped GaN-based VCSELs with sub-nanometer roughness polishing", IEEE Photonics Technology Letters, 25 (2013) 2014-2017.

  • M. Chen, B. P. Zhang*, L. E. Cai, J. Y. Zhang, L. Y. Ying and X. Q. Lv, "Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes", IEEE Photonics Journal, 5 (2013) 8400407.

  • X. Q. Lv, S. W. Chen, J. Y. Zhang, L. Y. Ying and B. P. Zhang*, "Tuning Properties of External Cavity Violet Semiconductor Laser", Chinese Physics Letters, 30 (2013) 074204.

  • G. E. Weng, B. P. Zhang*, M. M. Liang, X. Q. Lv, J. Y. Zhang, L. Y. Ying, Z. R. Qiu, H. Yaguchi, S. Kuboya, K. Onabe, S. Q. Chen and H. Akiyama, "Optical propertites and carrier dynamics in asymmetric coupled InGaN multiple quantum wells", Functional Materials Letters, 6 (2013) 1350021.

  • 孙丽,张江勇,陈明,梁明明,翁国恩,张保平,“p-GaN退火对InGaN量子阱光学性能的影响”, 半导体技术, 38 (2013) 35-39.

  • X. M. Cai, Y. Wang, Z. D. Li, X. Q. Lv, J. Y. Zhang, L. Y. Ying and B. P. Zhang*,"Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers", Applied Physics A, 111 (2013) 483-486 .

  • M. Chen, J. Y. Zhang*, X. Q. Lv, L. Y. Ying and B. P. Zhang*, "Effcet of Laser Pulse width on the Laser Lift-Off Process of GaN Film", Chinese Physics Letters, 30 (2013) 014203.

  • X. M. Cai, Y. Wang, B. H. Chen, M. M. Liang, W, J. Liu, J. Y. Zhang, X. Q. Lv, L. Y. Ying and B.P.Zhang*, "Investigation of InGaN p-i-n homojunction and heterojunction solar cells", IEEE Photonics Technology Letters, 25 (2013) 59-62.



厦门大学电子科学与技术学院(国家示范性微电子学院)

微纳光电子研究室: http://zbp.xmu.edu.cn

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