M. H. Li, Q. Li, H. H. Hsu, L. Y. Ying, B. P. Zhang and Z. W. Zheng*, "The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs." Semiconductor Science and Technology, 38.4 (2023): 045003.

M. H. Li, G. Y. He, Q. Li, L. Y. Ying, B. P. Zhang and Z. W. Zheng, "Physical Insights Into the Performances of Negative Capacitance Field Effect Transistors Using Single-Domain Versus Multidomain Models." IEEE Transactions on Electron Devices, 70 (2023):806-811.

Z. M. Zheng, Y. K. Wang, J. Hoo, S. P. Guo, Y. Mei, H. Long, L. Y. Ying, Z. W. Zheng and B. P. Zhang, "High-quality AlGaN epitaxial structures and realization of UVC vertical-cavity surface-emitting lasers." Science China Materials, (2023): 1-11.

X. Hou, T. Yang, S. S. Fan, H. Xu, D. Lida, Y. J. Liu, Y. Mei, G. E. Weng, S. Q. Chen, Weng, B. P. Zhang and K. Ohkawa, "Optical properties of InGaN-based red multiple quantum wells." Applied physics letters, 31(2023):18567-18575.

M.Yuan, M. K. Zhang, Z. Fu, S. Han, Y. N. Zhang, S. X.Wu, R. D. Hong, X. P. Chen, B. P. Zhang,* J. Chen Wang* and F. Zhang*, "Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Al Nanoparticle in 4H-SiC Microholes." ACS Appl. Nano Mater, 6(2023) :9376-9384.

Z. L. Lin, Y. Man, Z. Y. Lv, B. P. Zhang, H. Xu, D. Q. Yu, X. C. Yang, Y. He, X. W. Shi, L. Y. Ying and D. Zhang*, "High-Gain of Nd^III Complex Doped Optical Waveguide Amplifiers at 1.06 and 1.31 µm Wavelengths Based on Intramolecular Energy Transfer Mechanism." Advanced Materials, 35(2023):2209239.

B. C. Ren, W. W. Li*, L. Zhang and B. P. Zhang, "Group delay compensation based on negative group velocity effect of spoof surface plasmon polaritons." Japanese Journal of Applied Physics, 62(2023): 060901.

C. Y. Bao, X. Peng, L. Y. Ying, Y. Mei, B. P. Zhang and H. Long*, "Two-step spin coating CsPbBr₃ thin films and photodetectors in the atmosphere." Optics Letters, 48(2023): 2472-2475.

J. Y. Zhu, B. P. Zhang, Y. Y. Huang, Z. Y. Lv, L. Y. Ying, Y. Mei, Z. W. Zheng and D. Zhang, "Optical gain at 1.55 µm of Er(TMHD)₃ complex doped polymer waveguides based on the intramolecular energy transfer effect." Optics Express, 31(2023): 5242-5256.

Y. H. Chen, Y. Mei, Z. M. Zheng, R. B. Xu and B. P. Zhang, et al., "Effects of different current confinement layers in GaN-based VCSELs." AIP Advances, 13 (2023): 075114.

Z. Fu, M. K. Zhang, S. H, J. F. Cai and B. P. Zhang, et al., "High-Speed and Responsivity 4H-SiC 8×8 p-i-n Ultraviolet Photodiode Arrays With Micro-Hole Structure." IEEE Transactions on Electron Devices,70 (2023):4264-4267.

Z. M. Zheng, Y. K. Wang, Y. Mei, H. Long, L. Y. Ying, Z. W. Zheng and B. P. Zhang, "Current spreading structure of GaN-based vertical-cavity surface-emitting lasers." Optics Letters, 48.19 (2023): 5141-5144.

X. Hou, T. Yang, S. S. Fan, B. P. Zhang and K. Ohkawa, et al., "Improvement of optical properties of InGaN-based red multiple quantum wells." Optics Express 31.11 (2023): 18567-18575.

P. Gu, S. Yang, L. L. Ma, T. Yang, X. Hou, Y. Mei, L.Y. Ying, H. Long and B. P. Zhang, "Flexible GaN-based ultraviolet microdisk lasers on PET substrate." Optics Letters, 48.15 (2023): 4117-4120.

R. B. Xu, A. Hidefumi and B. P. Zhang. "Impacts of SiO₂-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers." IEEE Transactions on Electron Devices, 70 (2023): 5701-5706.

T. Yang, Y. H. Chen, Y. C. Wang, W. Ou, L. Y. Ying, Y. Mei, A. Q. Tian, J. P. Liu, H. C. Guo and B. P. Zhang, "Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity." Nano-Micro Letters, 15(2023): 223.

Y. C. Wang, T. Yang, L. Shi, Y. H. Chen, Y. Mei and B. P. Zhang, "Simulation of performance enhancement of GaN-based VCSELs by composition gradient InGaN last-quantum barrier", Semiconductor Science and Technology, 38(2023): 125003.

Q. Li, Y. X. Yang, T. T. Cheng, L. Y. Ying, B. P. Zhang and Z. W. Zheng, "Impact of Random Interface Traps Fluctuation on Device Variation of Oxide-Semiconductor Ferroelectric Field-Effect Transistor Memories",IEEE Electron Device Letters, 44(2023): 1979-1982.

Z. L. Cai, X. Y. He, K. K. Wang, X. Hou, Y. Mei, L. Y. Ying, B. P. Zhang and H. Long, "Enhancing Performance of GaN/Ga2O3 P-N Junction Uvc Photodetectors via Interdigitated Structure", Small Methods, (2023): 2301148.