个人简历

北京大学理学学士，物理学专业

北京大学理学博士，凝聚态物理专业

研究方向

半导体光电子学、发光二极管、半导体可见光激光器

成果奖励

III-V族氮化物材料生长用图形化蓝宝石衬底关键技术与产业化；教育部科技进步国家二等奖（参与人）（2015）

课题项目

利用碳纳米管改善激光剥离工艺及垂直结构LED的研究，国家自然科学基金（青年）项目，2018.01-2020.12，主持

纳米图形化（001）Si上生长半极性GaN及其LED器件，博士后基金，2015.11-2017.04，主持

代表作：

[1]S. Q. Lai, Q. X. Li, H. Long, L. Y. Ying, Z. W. Zheng, B. P. Zhang*,"Theoretical study and optimization of the green InGaN/GaN multiple quantum wells with pre-layer",Superlattices and Microstructures,155(2021)106906.

[2]Y. Mei, M. C. Xie, H. Xu, H. Long, L. Y. Ying and B. P. Zhang, "Electrially injected GaN-based microdisk towards an enfficient whispering gallery mode laser", Optics Express, 29(4)(2021)5598-5606.

[3]Y. H. Chen, Y. Mei, H. Xu, R. B. Xu, L. Y. Ying, Z. W. Zheng, H. Long and B. P. Zhang, "Improvement of Thermal Dissipation of GaN-Based Micro Cavity Light-Emitting Devices", IEEE Photonics Technology Letters, 33(1)(2021)11-22.

[4]S. Q. Lai, Q. X. Li, H. Long, J. Z. Wu, L. Y. Ying, Z. W. Zheng, Zh. R. Qiu, B. P. Zhang*, "Photoluminescence of Green InGaN/GaN MQWs Grown on Pre-wells",Chinese Physics B, 29(12)(2020)127802.

[5]S. Q. Lai, Q. X. Li, H. Long, J. Zh. Wu, L. Y. Ying, Zh. W. Zheng, Zh. R. Qiu and B. P. Zhang*, "Photoluminescence of green InGaN/GaN MQWs grown on pre-wells",Chinese Physics B, 29(2020)127802.

[6]Z. M. Zheng, H. Long, Samuel Matta, Mathieu Leroux, Julin Brault, L. Y. Ying, Z. W. Zheng and B. P. Zhang, "Photoassisted chemical smoothing of AlGaN surface after laser lift-off", Journal of Vacuum Science&Technology B, 38(2020)042207.

[7]R. B. Xu, Y. Mei, H. Xu, T. R. Yang, L. Y. Ying, Z. W. Zheng, H. Long, B. P. Zhang and J. P. Liu, "Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs", IEEE Photonics Journal, 12(2020)1501708.

[8]苏旭良，王灿，应磊莹，徐欢，许荣彬，梅洋，郑志威，龙浩，张保平, "自分裂GaN基垂直结构LED研究", 《光子学报》，49（2020）1223004.

[9]陈澜, 吴瑾照，龙浩，史晓玲，应磊莹，郑志威，丘志仁，张保平，"光电耦合对InGaN/GaN量子阱光学性能的影响"，《发光学报》, 41(2020)0048.

[10]Y. Mei, R. B. Xu, L. Y. Ying, J. P. Liu, Z. W. Zheng, H. Long and B. P. Zhang, "Room temperature continuous wave lasing of GaN-based green vertical-cavity surface-emitting lasers ", Gallium Nitride Materials and Devices XIV, 10(2019)117.