郑志威

作者: 点击数:

个人简历

南京理工大学工学学士,电子科学与技术专业

中国科学院微电子研究所工学博士,微电子学与固体电子学专业

研究方向

薄膜晶体管器件及TCAD仿真

主要进行金属氧化物薄膜晶体管(TFT)器件研究,包含金属氧化物TFT材料、制造及可靠性等研究。此外,还开展针对TFT等电子器件的TCAD仿真研究。

代表作

[1]S. Q. Lai, Q. X. Li, H. Long, L. Y. Ying, Z. W. Zheng, B. P. Zhang*,"Theoretical study and optimization of the green InGaN/GaN multiple quantum wells with pre-layer",Superlattices and Microstructures,155(2021)106906.

[2]Y. H. Chen, Y. Mei, H. Xu, R. B. Xu, L. Y. Ying, Z. W. Zheng, H. Long and B. P. Zhang, "Improvement of Thermal Dissipation of GaN-Based Micro Cavity Light-Emitting Devices", IEEE Photonics Technology Letters, 33(1)(2021)11-22.

[3]S. Q. Lai, Q. X. Li, H. Long, J. Zh. Wu, L. Y. Ying, Z. W. Zheng, Zh. R. Qiu and B. P. Zhang*, "Photoluminescence of green InGaN/GaN MQWs grown on pre-wells",Chinese Physics B, 29(2020)127802.

[4]Z. M. Zheng, H. Long, Samuel Matta, Mathieu Leroux, Julin Brault, L. Y. Ying, Z. W. Zheng and B. P. Zhang, "Photoassisted chemical smoothing of AlGaN surface after laser lift-off", Journal of Vacuum Science&Technology B, 38(2020)042207.

[5]R. B. Xu, Y. Mei, H. Xu, T. R. Yang, L. Y. Ying, Z. W. Zheng, H. Long, B. P. Zhang and J. P. Liu, "Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs", IEEE Photonics Journal, 12(2020)1501708.

[6]苏旭良,王灿,应磊莹,徐欢,许荣彬,梅洋,郑志威,龙浩,张保平, "自分裂GaN基垂直结构LED研究", 《光子学报》,49(2020)1223004.

[7]陈澜, 吴瑾照,龙浩,史晓玲,应磊莹,郑志威,丘志仁,张保平,"光电耦合对InGaN/GaN量子阱光学性能的影响",《发光学报》, 41(2020)0048.

[8]Y. Mei, R. B. Xu, L. Y. Ying, J. P. Liu, Z. W. Zheng, H. Long and B. P. Zhang, "Room temperature continuous wave lasing of GaN-based green vertical-cavity surface-emitting lasers ", Gallium Nitride Materials and Devices XIV, 10(2019)117.

[9]R. B. Xu, H. Xu, Y. Mei, X. L. Shi,L. Y. Ying, Z. W. Zheng, H. Long,Zh. R Qiu, B. P. Zhang*,J. P. Liu* and H. Ch. Kuo, "Emission dynamics of GaN-based blue resonant-cavity light-emitting diodes", Journal of Luminescence, 216 (2019) 11671.

[10]J. Zh. Wu, X. L. Shi, H. Long, L.Chen, L. Y. Ying, Z. W. Zheng and B. P. Zhang, "Large Rabi splitting in InGaN quantum wells microcavity at room temperature", Materials Research Express, 6(2019)076204.





厦门大学电子科学与技术学院(国家示范性微电子学院)

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